The Effect of Bake Temperature on SU-8 Gate Insulator of IGZO Thin Film Transistor
Résumé
SU-8 photoresist was applied to the gate insulator of a-IGZO TFT. The hard bake temperature of SU-8 is important and was varied from 95 to 185 A degrees C. The FTIR showed that hard-bake temperature higher than 125 A degrees C is necessary for complete polymerization. The leakage current and breakdown voltage were improved as increasing hard bake temperatures to 155 A degrees C. However, the crack was generated at 185 A degrees C degrading the electrical characteristics of insulator. The SU-8 insulator was successfully applied to a-IGZO TFT where the on-off ratio was highest for hard-bake temperature of 155 A degrees C.