%0 Journal Article %T The Effect of Bake Temperature on SU-8 Gate Insulator of IGZO Thin Film Transistor %+ Hoseo Université de Corée du Sud %+ Institut d'Électronique et des Technologies du numéRique (IETR) %A Hong, Min-Taek %A Moon, Seung Jae %A Lee, Jong Mo %A Bae, Byung Seong %A Yun, Eui-Jung %A Harnois, Maxime %A Jacques, Emmanuel %A Mohammed-Brahim, Tayeb %Z Academic Research fund of Hoseo University [2015-0111] %< avec comité de lecture %@ 0374-4884 %J Journal of the Korean Physical Society %I Korean physical society %V 73 %N 3 %P 297-301 %8 2018-08 %D 2018 %R 10.3938/jkps.73.297 %K Oxide semiconductor %K Oxide TFT %K Low voltage driving %K Insulator %K Oxidation response %Z Engineering Sciences [physics]Journal articles %X SU-8 photoresist was applied to the gate insulator of a-IGZO TFT. The hard bake temperature of SU-8 is important and was varied from 95 to 185 A degrees C. The FTIR showed that hard-bake temperature higher than 125 A degrees C is necessary for complete polymerization. The leakage current and breakdown voltage were improved as increasing hard bake temperatures to 155 A degrees C. However, the crack was generated at 185 A degrees C degrading the electrical characteristics of insulator. The SU-8 insulator was successfully applied to a-IGZO TFT where the on-off ratio was highest for hard-bake temperature of 155 A degrees C. %G English %L hal-01879714 %U https://univ-rennes.hal.science/hal-01879714 %~ UNIV-NANTES %~ UNIV-RENNES1 %~ CNRS %~ INSA-RENNES %~ IETR %~ STATS-UR1 %~ CENTRALESUPELEC %~ UR1-HAL %~ UR1-MATH-STIC %~ UR1-UFR-ISTIC %~ IETR-MM %~ TEST-UR-CSS %~ UNIV-RENNES %~ INSA-GROUPE %~ TEST-HALCNRS %~ UR1-MATH-NUM %~ NANTES-UNIVERSITE %~ UNIV-NANTES-AV2022