Structural and dielectric characterization of perovskite oxide and oxynitride lanthanum titanium films deposited by reactive sputtering deposition - Université de Rennes Access content directly
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Structural and dielectric characterization of perovskite oxide and oxynitride lanthanum titanium films deposited by reactive sputtering deposition

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Materials
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hal-00869768 , version 1 (04-10-2013)

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  • HAL Id : hal-00869768 , version 1

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Claire Le Paven-Thivet, Yu Lu, Hung Nguyen, Ratiba Benzerga, Laurent Le Gendre, et al.. Structural and dielectric characterization of perovskite oxide and oxynitride lanthanum titanium films deposited by reactive sputtering deposition. 19th International Vacuum Congress (IVC-19), Sep 2013, Paris, France. ⟨hal-00869768⟩
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