Mid-infrared guided photoluminescence from integrated Pr3+-doped selenide ridge waveguides - Université de Rennes Access content directly
Journal Articles Optical Materials Year : 2018

Mid-infrared guided photoluminescence from integrated Pr3+-doped selenide ridge waveguides

Abstract

Praseodymium-doped selenide thin films are deposited by radio frequency magnetron sputtering on thermally oxidized silicon wafers and undoped selenide layers. Ridge waveguides are then processed using photolithography and dry etching techniques. Under optical pumping at 1.55 μm, broadband guided mid-infrared photoluminescence is recorded for the first time for wavelengths above 4 μm from rare earth-doped integrated chalcogenides waveguides. Optical design confirmed that these active waveguides allow single-mode optical propagation at a wavelength of 4.70 μm.
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Dates and versions

hal-01639691 , version 1 (20-11-2017)

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Loïc Bodiou, Florent Starecki, Jonathan Lemaitre, Virginie Nazabal, Jean-Louis Doualan, et al.. Mid-infrared guided photoluminescence from integrated Pr3+-doped selenide ridge waveguides. Optical Materials, 2018, 75, pp.109-115. ⟨10.1016/j.optmat.2017.10.001⟩. ⟨hal-01639691⟩
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