Study of non-stoichiometric BaSrTiFeO3 oxide dedicated to semiconductor gas sensors - Université de Rennes Access content directly
Conference Papers Year : 2016

Study of non-stoichiometric BaSrTiFeO3 oxide dedicated to semiconductor gas sensors


Developing instrumentation systems compatible with the European RoHS directive (restriction of hazardous substances) to monitor our environment is of great interest for our society. Our research therefore aims at developing innovating integrated systems of detection dedicated to the characterization of various environmental exposures. These systems, which integrate new gas sensors containing lead-free oxides, are dedicated to the detection of flammable and toxic gases. We have firstly chosen to study semiconductor gas sensors implemented with lead-free oxides in view to develop RoHS devices. Therefore thick films deposited by spin-coating and screen-printing have been chosen for their robustness, ease to realize and ease to finally obtain cost-effective sensors. As crystalline defects and ionic vacancies are of great interest for gas detection, we have decided to study a non-stoichiometric composition of the BaSrTiFeO3 sensible oxide. Nonstoichiometric BaSrTiFeO3 lead-free oxide thick films were deposited by screen-printing on polycrystalline AFO3 substrates covered by a layer of Ag-Pd acting as bottom electrode. The physical characterizations have revealed a crystalline structure mainly composed of BaTiO3 pseudo-cubic phase and Ba4Ti12O27 monoclinic phase for the powder, and a porous microstructure for the thick films. When compared to a BSTF thick film with a stoichiometric composition, a notable increase in the BSTF dielectric constant value was observed when taking into account of a similar microstructure and grain size. The loss tangent mean value varies more softly for the non-stoichiometric BaSrTiFeO3 films than for the perovskite BSTF film as tanδ decreases from 0.45 to 0.04 when the frequency increases from 100 Hz to 1 MHz. © Published under licence by IOP Publishing Ltd.

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hal-01515183 , version 1 (27-04-2017)



D. Fasquelle, N. Verbrugghe, S. Députier. Study of non-stoichiometric BaSrTiFeO3 oxide dedicated to semiconductor gas sensors. 8th International Conference on Physics and its Applications, ICOPIA 2016, Department of Physics,; University of Sebelas Maret, Aug 2016, Denpasar, Indonesia. ⟨10.1088/1742-6596/776/1/012038⟩. ⟨hal-01515183⟩
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