Highly sensitive visible and near-infrared photo-FET based on PbS quantum dots embedded in the gate insulator - Université de Rennes Access content directly
Conference Papers Year : 2016

Highly sensitive visible and near-infrared photo-FET based on PbS quantum dots embedded in the gate insulator

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hal-01479180 , version 1 (28-02-2017)

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  • HAL Id : hal-01479180 , version 1

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Xiang Liu, Emmanuel Jacques, Tayeb Mohammed-Brahim, Wel Lei. Highly sensitive visible and near-infrared photo-FET based on PbS quantum dots embedded in the gate insulator. 10th International Conference on Sensing Technology (ICST), Nov 2016, Nanjing, PEOPLES R, China. ⟨hal-01479180⟩
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