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Communication Dans Un Congrès Année : 2017

Synthesis and dielectric/ferroelectric properties of oxynitride perovskite thin films

C. Le Paven
  • Fonction : Auteur
V. Laur
  • Fonction : Auteur
X. Castel
  • Fonction : Auteur

Résumé

Strontium and tantalum based oxynitride perovskite thin films were deposited by reactive magnetron sputtering. Epitaxial films deposited on Nb-SrTiO3 substrates show smooth surfaces with roughness values from 1.5 to 3.6 nm for a thickness of films in the range 20–1600 nm. The samples are yellow with band gap values around 2.35 eV. Piezo-force microscopy characterization pointed out the local piezoelectric and ferroelectric behavior of the oxynitride perovskite films. In the low frequency range, the 1600 nm-thick film exhibits a permittivity of 175 at 10 kHz, with dielectric losses of 0.055. Permittivity is lowered in high frequencies with a value around 65 obtained on a 1520 nm-thick film deposited on MgO substrate, which is textured with a preferential c-axis orientation. No accordability of the permittivity was highlighted at a macroscopic scale. The moderate crystallographic strain evidenced in the 20 nm thin film does not induce a high permittivity.

Domaines

Matériaux

Dates et versions

hal-01469098 , version 1 (16-02-2017)

Identifiants

Citer

C. Le Paven, Ratiba Benzerga, Anthony Ferri, Didier Fasquelle, V. Laur, et al.. Synthesis and dielectric/ferroelectric properties of oxynitride perovskite thin films. E-MRS 2016 Spring Meeting “European Material Research Society”, May 2016, Lille, France. pp.126-132, ⟨10.1016/J.materresbull.2016.11.030⟩. ⟨hal-01469098⟩
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