Improvement of n-type OTFT electrical stability by gold electrode modification
Résumé
N-type organic thin film transistors (OTFT) containing modified gold electrodes have been fabricated to investigate the influence of the self assembled monolayer on the transistor characteristics. We report on the effect of drain/source modification by thiol derivatives on the performances, electrical parameters uniformity and electrical stability of C60 transistors. In the literature, electrical instability is often attributed to organic semiconductor (OSC), OSC-insulator interface and insulator. We found here that OSC-metal interfaces affect dramatically the operational stability for bottom gate/bottom contact structure. These effects have been attributed to morphological evolution at the interface metal-OSC induced by the self-assembled monolayers. © 2016 Elsevier B.V.
Mots clés
Chemical sensors
Electric network parameters
Electrodes
Field effect transistors
Fullerenes
Gold
Monolayers
Organic polymers
Phototransistors
Semiconducting organic compounds
Stability
Thin film circuits
Thin film transistors
Thin films
Transistors
Electrical instability
Electrical parameter
Electrical stability
Morphological evolution
Operational stability
Organic thin film transistors
Sams
Transistor characteristics
Self assembled monolayers