Microstructure and Mechanical Properties of a-CN x Films Prepared by Bias Voltage Assisted PLD with Carbon Nitride Target - Université de Rennes Access content directly
Journal Articles Surface and Coatings Technology Year : 2014

Microstructure and Mechanical Properties of a-CN x Films Prepared by Bias Voltage Assisted PLD with Carbon Nitride Target

Abstract

Amorphous carbon nitride (a-CN x) films were deposited on silicon substrates using pulsed laser deposition technique (PLD) with a carbon nitride target and a negative bias voltage up to -120 V. The microstructure, chemical composition, bonding configuration and mechanical properties of the films were characterized by using scanning electron microscopy (SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, nanoindentation and ball-on-disc abrasion test. The results show that the negative bias voltage promotes the formation of sp 3 hybridization bonding and leads to a great improvement of nitrogen content (up to 38 at.%) in the films. With an increasing bias voltage from -40 V to -120 V, the nitrogen content and the fraction of sp 3 hybridization bonding  Corresponding author.
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Dates and versions

hal-01088708 , version 1 (28-11-2014)

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Xiao Huo Zheng, Fang-Er Yang, Li Chen, Zhan-Ling Chen, Ren-Guo Song, et al.. Microstructure and Mechanical Properties of a-CN x Films Prepared by Bias Voltage Assisted PLD with Carbon Nitride Target. Surface and Coatings Technology, 2014, 258, pp.716-721. ⟨10.1016/j.surfcoat.2014.08.009⟩. ⟨hal-01088708⟩
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