%0 Journal Article %T Microstructure and Mechanical Properties of a-CN x Films Prepared by Bias Voltage Assisted PLD with Carbon Nitride Target %+ Zhejiang University of Science and Technology %+ Changzhou University %+ Institut des Sciences Chimiques de Rennes (ISCR) %A Zheng, Xiao Huo %A Yang, Fang-Er %A Chen, Li %A Chen, Zhan-Ling %A Song, Ren-Guo %A Zhang, Xianghua %< avec comité de lecture %@ 0257-8972 %J Surface and Coatings Technology %I Elsevier %V 258 %P 716–721 %8 2014-11-15 %D 2014 %R 10.1016/j.surfcoat.2014.08.009 %K Carbon nitride %K XPS %K Raman %K Friction and wear %K Pulsed laser deposition %Z Chemical Sciences/Inorganic chemistryJournal articles %X Amorphous carbon nitride (a-CN x) films were deposited on silicon substrates using pulsed laser deposition technique (PLD) with a carbon nitride target and a negative bias voltage up to -120 V. The microstructure, chemical composition, bonding configuration and mechanical properties of the films were characterized by using scanning electron microscopy (SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, nanoindentation and ball-on-disc abrasion test. The results show that the negative bias voltage promotes the formation of sp 3 hybridization bonding and leads to a great improvement of nitrogen content (up to 38 at.%) in the films. With an increasing bias voltage from -40 V to -120 V, the nitrogen content and the fraction of sp 3 hybridization bonding  Corresponding author. %G English %2 https://univ-rennes.hal.science/hal-01088708/document %2 https://univ-rennes.hal.science/hal-01088708/file/Microstructure%20and%20Mechanical%20-finalmanuscript.pdf %L hal-01088708 %U https://univ-rennes.hal.science/hal-01088708 %~ UNIV-RENNES1 %~ CNRS %~ INSA-RENNES %~ ENSC-RENNES %~ ISCR %~ SCR_VC %~ STATS-UR1 %~ UR1-SPM %~ INC-CNRS %~ UR1-UFR-SPM %~ UR1-HAL %~ UR1-SDLM %~ IVER %~ TEST-UNIV-RENNES %~ TEST-UR-CSS %~ UNIV-RENNES %~ INSA-GROUPE %~ UR1-MMS %~ TEST2-HALCNRS