Pulsed laser deposited and sulfurized Cu2ZnSnS4 thin film for efficient solar cell
Résumé
Kesterite quaternary material Cu2ZnSnS4, (CZTS)-based thin-film solar cells have attracted intensive attention owing to their earth-abundant nature, stable thermodynamic structure, and large potential for high power conversion efficiency (PCE) defined by their suitable optoelectronic properties. As a widely used thin film preparation method, pulsed laser deposition (PLD) has not been fully studied in CZTS thin-film solar cell. Herein, a promising route based on PLD from a quaternary target and post-sulphuration for CZTS thin film was achieved. Through systematical investigation and optimization of substrate temperature, laser pulse energy, and sulfurization temperature, the CZTS thin films showed single kesterite structure, high (112) orientation, and dense polycrystalline grains with controlled composition. The CZTS thin-film solar cell exhibited a record PCE of 6.62%, the highest reported value when using pulsed laser deposited and sulfurized process, due to its lower series resistance, reduced grain boundary effects, superior interface quality, and a suitable depletion width. This research offers a facile and robust preparation method for CZTS films with enhanced photovoltaic properties and increased efficiency.
| Origine | Fichiers produits par l'(les) auteur(s) |
|---|