Physical and electrochemical behaviors of AgX (X = S/I) in a GeS2–Sb2S3 chalcogenide-glass matrix - Université de Rennes Access content directly
Journal Articles Ceramics International Year : 2020

Physical and electrochemical behaviors of AgX (X = S/I) in a GeS2–Sb2S3 chalcogenide-glass matrix

Baochen Ma
  • Function : Author
Qing Jiao
  • Function : Correspondent author
Yeting Zhang
  • Function : Author
Xing Sun
  • Function : Author
Guoliang Yin
  • Function : Author
Xianghua Zhang
Hongli Ma
Xueyun Liu
  • Function : Author
Shixun Dai
  • Function : Author
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hal-02493231 , version 1 (27-02-2020)

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Baochen Ma, Qing Jiao, Yeting Zhang, Xing Sun, Guoliang Yin, et al.. Physical and electrochemical behaviors of AgX (X = S/I) in a GeS2–Sb2S3 chalcogenide-glass matrix. Ceramics International, 2020, 46 (5), pp.6544-6549. ⟨10.1016/j.ceramint.2019.11.138⟩. ⟨hal-02493231⟩
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