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Article Dans Une Revue Solid State Phenomena Année : 2015

Positron Annihilation in IR Transmitting GeS2-Ga2S3 Glasses

Résumé

Positron annihilation lifetime spectroscopy combined with Doppler broadening of annihilation radiation was applied to study free-volume entities in GeS2-Ga2S3 glasses affected by Ga additions. It is shown that Ga-related void sub-system plays a decisive role in positron trapping process, while the overall density variation is defined mainly by Ge-related sub-system. These results serve as basis for new characterization route for inner free-volume structure of these glasses.

Domaines

Matériaux
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Dates et versions

hal-01429120 , version 1 (06-01-2017)

Identifiants

Citer

Halyna Klym, A. Ingram, O Shpotyuk, R. Szatanik, Elena Petracovschi, et al.. Positron Annihilation in IR Transmitting GeS2-Ga2S3 Glasses. Solid State Phenomena, 2015, 230, pp.221-227. ⟨10.4028/www.scientific.net/SSP.230.221⟩. ⟨hal-01429120⟩
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