Effective Metal Top Contact on the Organic Layer via Buffer-Layer-Assisted Growth: A Multiscale Characterization of Au/Hexadecanethiol/n-GaAs(100) Junctions - Université de Rennes Access content directly
Journal Articles Journal of Physical Chemistry C Year : 2016

Effective Metal Top Contact on the Organic Layer via Buffer-Layer-Assisted Growth: A Multiscale Characterization of Au/Hexadecanethiol/n-GaAs(100) Junctions

Alexandra Junay
Sophie Guézo
Pascal Turban
  • Function : Author
  • PersonId : 896
  • IdHAL : pturban
Sylvain Tricot
Arnaud Le Pottier
J. Avila
  • Function : Author
Philippe Schieffer
F. Solal

Abstract

In the field of organic and molecular electronics at monolayer coverage, the need for abrupt and well-controlled top metal contacts is a key point. A general method which provides reliable molecular junctions with most metals remains to be found. In this paper we show that reliable molecular junctions Au/hexadecanethiol/n-GaAs(100) are obtained using buffer-layer-assisted growth (BLAG). They show in hot electron transport measurements at the nanoscale a tunnel regime through the organic monolayer with a full spatial uniformity. Using ballistic electron emission microscopy (BEEM) in the spectroscopic mode as well as photoemission and C(V)-transport measurements, we draw a coherent band alignment scheme of the whole heterostructure at the nanoscale and at the macroscopic scale. Through this study, the BLAG method appears as a general method that should work for contacting organic monolayers with most metals. © 2016 American Chemical Society.
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hal-01416360 , version 1 (14-12-2016)

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Alexandra Junay, Sophie Guézo, Pascal Turban, Sylvain Tricot, Arnaud Le Pottier, et al.. Effective Metal Top Contact on the Organic Layer via Buffer-Layer-Assisted Growth: A Multiscale Characterization of Au/Hexadecanethiol/n-GaAs(100) Junctions. Journal of Physical Chemistry C, 2016, 120 (42), pp.24056--24062. ⟨10.1021/acs.jpcc.6b05729⟩. ⟨hal-01416360⟩
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