Photonic bandgap amorphous chalcogenide thin films with multilayered structure grown by pulsed laser deposition method
Résumé
Amorphous chalcogenide thin films were fabricated by the pulsed laser deposition technique. Thereafter, the stacks of multilayered thin films for reflectors and microcavity were designed for telecommunication wavelength. The prepared multilayered thin films for reflectors show good compatibility. The microcavity structure consists of Ge25Ga5Sb10S65 (doped with Er3+) spacer layer surrounded by two 5-layer As40Se60/Ge25Sb5S70 reflectors. Scanning/transmission electron microscopy results show good periodicity, great adherence and smooth interfaces between the alternating dielectric layers, which confirms a suitable compatibility between different materials. The results demonstrate that the chalcogenides can be used for preparing vertical Bragg reflectors and microcavity with high quality. © 2016, Tianjin University of Technology and Springer-Verlag Berlin Heidelberg.
Mots clés
Reflection
Scanning electron microscopy
Pulsed lasers
Amorphous chalcogenide
Semiconducting selenium compounds
Amorphous films
Arsenic
Chalcogenides
Deposition
Dielectric materials
Germanium
Inorganic compounds
Interfaces (materials)
Microcavities
Pulsed laser deposition
Thin films
Smooth interface
Telecommunication wavelengths
Pulsed-laser deposition technique
Multilayered thin films
Multi-layered structure
Microcavity structures
Good compatibility