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                <term xml:lang="en">Semiconducting selenium compounds</term>
                <term xml:lang="en">Scanning electron microscopy</term>
                <term xml:lang="en">Good compatibility</term>
                <term xml:lang="en">Microcavity structures</term>
                <term xml:lang="en">Multi-layered structure</term>
                <term xml:lang="en">Multilayered thin films</term>
                <term xml:lang="en">Pulsed-laser deposition technique</term>
                <term xml:lang="en">Telecommunication wavelengths</term>
                <term xml:lang="en">Smooth interface</term>
                <term xml:lang="en">Thin films</term>
                <term xml:lang="en">Pulsed lasers</term>
                <term xml:lang="en">Amorphous chalcogenide</term>
                <term xml:lang="en">Dielectric materials</term>
                <term xml:lang="en">Amorphous films</term>
                <term xml:lang="en">Arsenic</term>
                <term xml:lang="en">Chalcogenides</term>
                <term xml:lang="en">Deposition</term>
                <term xml:lang="en">Reflection</term>
                <term xml:lang="en">Pulsed laser deposition</term>
                <term xml:lang="en">Microcavities</term>
                <term xml:lang="en">Interfaces (materials)</term>
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              <p>Amorphous chalcogenide thin films were fabricated by the pulsed laser deposition technique. Thereafter, the stacks of multilayered thin films for reflectors and microcavity were designed for telecommunication wavelength. The prepared multilayered thin films for reflectors show good compatibility. The microcavity structure consists of Ge25Ga5Sb10S65 (doped with Er3+) spacer layer surrounded by two 5-layer As40Se60/Ge25Sb5S70 reflectors. Scanning/transmission electron microscopy results show good periodicity, great adherence and smooth interfaces between the alternating dielectric layers, which confirms a suitable compatibility between different materials. The results demonstrate that the chalcogenides can be used for preparing vertical Bragg reflectors and microcavity with high quality. © 2016, Tianjin University of Technology and Springer-Verlag Berlin Heidelberg.</p>
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