Air-stable n-channel organic field-effect transistors based on a sulfur rich π-electron acceptor - Université de Rennes Access content directly
Journal Articles Journal of Materials Chemistry C Year : 2015

Air-stable n-channel organic field-effect transistors based on a sulfur rich π-electron acceptor

Abstract

Thin-film and single-crystal n-channel organic field-effect transistors are built from the sulfur rich π-electron acceptor, (E)-3,3′-diethyl-5,5′-bithiazolidinylidene-2,4,2′,4′-tetrathione (DEBTTT). Different source and drain electrode materials are investigated: gold, the conducting charge transfer salt (tetrathiafulvalene)(tetracyanoquinodimethane), and carbon paste. Regardless of the nature of the electrodes, air-stable n-channel transistors have been obtained. Single crystals exhibit a higher performance than the thin-film transistors with a mobility of up to 0.22 cm2 V−1 s−1. These thin-film and single-crystal devices exhibit excellent long-term stability as demonstrated by the mobility measured during several weeks. The high mobility and air stability are ascribed to the characteristic three-dimensional S–S network coming from the thioketone sulfur atoms.

Dates and versions

hal-01150368 , version 1 (11-05-2015)

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Agathe Filatre-Furcate, Toshiki Higashino, Dominique Lorcy, Takehiko Mori. Air-stable n-channel organic field-effect transistors based on a sulfur rich π-electron acceptor. Journal of Materials Chemistry C, 2015, 3 (15), pp.3569--3573. ⟨10.1039/C5TC00253B⟩. ⟨hal-01150368⟩
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