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Pré-Publication, Document De Travail Année : 2011

Experimental study of the delayed threshold phenomenon in a semiconductor laser

Résumé

An experimental study of the delayed threshold phenomenon in a Vertical Extended Cavity Semiconductor Emitting Laser is carried out. Under modulation of the pump power, the laser intensity exhibits a hysteresis behavior in the vicinity of the threshold. The temporal width of this hysteresis is measured as a function of the modulation frequency, and is proved to follow the predicted scaling law. A model based on the rate equations is derived and used to analyze the experimental observations. A frequency variation of the laser around the delayed threshold and induced by the phase-amplitude coupling is predicted and estimated.
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Dates et versions

hal-00661126 , version 1 (18-01-2012)
hal-00661126 , version 2 (20-06-2012)

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Abdelkrim El Amili, Grégory Gredat, Mehdi Alouini, Isabelle Sagnes, Fabien Bretenaker. Experimental study of the delayed threshold phenomenon in a semiconductor laser. 2011. ⟨hal-00661126v1⟩
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