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Asymmetric Stark Shift in InAs/GaAsP(Q1.18) quantum dots grown on (311)B InP substrateSQDA (International Workshop on Semiconductor Quantum Dot Devices and Applications), Jul 2008, Rennes, France
Conference papers
hal-00490418v1
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Light emitting diodes on silicon substrates: preliminary resultsTNT (Trends in Nanotechnologies), Sep 2008, Oviedo, Spain. pp.2212-16, ⟨10.1002/pssc.200881728⟩
Conference papers
hal-00491905v1
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MBE growth of (GaAsPN/GaPN)/GaP quantum wells light emitting diodeeuro-MBE 2011, Mar 2011, Alpe d'Huez, France
Conference papers
hal-00654313v1
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Sb surfactant mediated growth of InAs/AlAsSb quantum wells up to 8 monolayersInternational Conference on Superlattices, Nanostructures and Nanodevices, Jul 2012, Dresden, Germany
Conference papers
hal-00809031v1
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GaAsPN Absorbers Grown on GaP for Multijunction Solar Cells: Optical Absorption and Thermal Conductivity Properties19th International Conference on Molecular-Beam Epitaxy (IC-MBE 2016), Sep 2016, Montpellier, France. 2016
Conference poster
hal-01496917v1
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First stage results on III-V/Si tandem cells using GaAsPN dilute-nitrideEuropean Materials Research Society - Spring Meeting 2016 (E-MRS 2016 Spring Meeting), May 2016, Lille, France
Conference papers
hal-01496924v1
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Electronic properties of bulk 3D, 2D Ruddlesden-Popper phases and colloidal quantum dots of halide perovskite semiconductors: recent results (Keynote Speaker)3è Journées Pérovskites Hybrides (JPH 2017), May 2017, Angers, France
Conference papers
hal-01533009v1
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Structural and theoretical studies of Black Phases of CsPbI3: influence of the anharmonicityMaterials Research Society - Spring Meeting 2019 (MRS 2019 Spring Meeting), Apr 2019, Phoenix, United States
Conference papers
hal-02114787v1
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30-band k.p method for quantum semiconductor heterostructuresApplied Physics Letters, 2011, 98, pp.251913. ⟨10.1063/1.3600643⟩
Journal articles
hal-00604845v1
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Croissance hétérogène de semi-conducteurs III-V sur silicium : vers l'optoélectronique sur siliciumSéminaire PONANT 2010, Jul 2010, Rennes, France. pp.9-11
Conference papers
hal-00504506v1
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Atomistic simulations of the optical absorption of type II CdSe/ZnTe superlatticesNanoscale Research Letters, 2012, International Conference on Superlattices, Nanostructures, and Nanodevices (ICSNN 2012), 7, pp.543. ⟨10.1186/1556-276X-7-543⟩
Journal articles
hal-00743125v1
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Design and fabrication of a tunable InP-based VCSEL using a electro-optic index modulatorIndium Phosphide and Related Materials Conference 2006, May 2006, Pinceton, United States. p64 - 67, ⟨10.1109/ICIPRM.2006.1634112⟩
Conference papers
hal-00489384v1
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Photoluminescence de nanostructures sur substrat GaP/SiJournées Nanosciences de Bretagne (JNB2), May 2008, Rennes, France. pp.1
Conference papers
hal-00489402v1
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Insight into electronic and structural properties of CH3NH3PbX3 (X=Cl, Br, I) hybrid perovskites from tight binding modeling and NMR spectroscopy2nd International Conference on Perovskite Solar Cells and Optoelectronics (PSCO-2016), Sep 2016, Genova, Italy. 2016
Conference poster
hal-01416246v1
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Symmetry-Based Tight Binding Modeling of Halide Perovskite SemiconductorsJournal of Physical Chemistry Letters, 2016, 7 (19), pp.3833-3840. ⟨10.1021/acs.jpclett.6b01749⟩
Journal articles
hal-01366310v1
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III-V GaP solar cells on silicon12è Journées Nationales du PhotoVoltaïque (JNPV 2022), Nov 2022, Dourdan, France
Conference poster
hal-03968270v1
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k.p theory beyond standard 8-band theory parametrization strategies and its applicability in electronic and optoelectronic devices designWorkshop on Empirical Methods in Semiconductor Nano-structures Design and Modelling, Jun 2010, Manchester, United Kingdom
Conference papers
hal-00641080v1
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Advanced concepts of photovoltaics based on III-V compounds16th International Conference of Physical Chemistry (ROMPHYSCHEM-16), Sep 2016, Galaţi, Romania
Conference papers
hal-01496667v1
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Towards III-V on silicon solar cells7è Journées Nationales du PhotoVoltaïque (JNPV 2017), Dec 2017, Dourdan, France. 107, pp.191603 - 191603, 2015
Conference poster
hal-01660154v1
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Design of an InGaAs/InP 1.55 µm electrically pumped VCSELOptical and Quantum Electronics, 2008, 40 (14-15), pp.1193-98. ⟨10.1007/s11082-009-9306-1⟩
Journal articles
istex
hal-00483143v1
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Réalisation d'une DEL à puits quantiques de GaAsP sur substrat GaPINNOV'INSA (Recherche, développement, innovation et transfert à l'INSA), May 2010, Rennes, France. pp.1
Conference papers
hal-00504484v1
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Theoretical study of highly strained InAs material from first-principles modelling: application to an ideal QDJournal of Physics D: Applied Physics, 2008, 41, pp.165505. ⟨10.1088/0022-3727/41/16/165505⟩
Journal articles
hal-00491451v1
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Photocurrent study of InAs/GaInAsP(Q1.18) quantum dotsIndium Phosphide and Related Materials (IPRM), May 2008, Versailles, France. pp.309-11, ⟨10.1109/ICIPRM.2008.4702977⟩
Conference papers
hal-00501639v1
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ab initio modeling of InAs/InP valence band offsetGDR CoDFT 2013, May 2013, Lorient, France
Conference papers
hal-01018210v1
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CdSe/ZnTe superlattices optimized as absorbers for photovoltaics17th European Molecular Beam Epitaxy Workshop (EuroMBE), Mar 2013, Levi, Finland
Conference papers
hal-00805119v1
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Symmetry-Based Tight Binding Modeling of Halide Perovskite SemiconductorsMultiscaleSolar COST meeting (6th Management Committee and Workgroup Meetings), Jul 2017, Vilnius, Lithuania
Conference papers
hal-01563082v1
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Fundamental studies for coherent growth of III-V materials on Si: toward Photonics on SiliconEMRS, Jun 2009, Strasbourg, France. pp.1
Conference papers
hal-00491771v1
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Thermodynamic evolution of antiphase boundaries in GaP/Si epilayers evidenced by advanced X-ray scatteringApplied Surface Science, 2012, 258, pp.2808. ⟨10.1016/j.apsusc.2011.10.139⟩
Journal articles
istex
hal-00654301v1
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PHOTOCURENT SPECTROSCOPY OF InAs/GaInAsP(Q1.18) QUANTUM DOTSLWQD (International Workshop on Long Wavelength Quantum Dots : Growth and Applications), Jul 2007, Rennes, France
Conference papers
hal-00490465v1
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Optical properties of potential-inserted quantum wells in the near infrared and Terahertz rangesSolid State Communications, 2016, 236, pp.7-11. ⟨10.1016/j.ssc.2016.03.007⟩
Journal articles
hal-01337261v1
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