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authFullName_s : S. Bebiche
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Influence of the gate bias stress on the stability of n-type organic field-effect transistors based on dicyanovinylene-dihydroindenofluorene semiconductors

S. Bebiche , P.A. Cisneros-Perez , T. Mohammed-Brahim , M. Harnois , J. Rault-Berthelot et al.
Materials Chemistry Frontiers, 2018, 2 (9), pp.1631-1641. ⟨10.1039/c8qm00193f⟩
Journal articles hal-01881024v1
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Performance improvement of IF(CN2)2 meta based N-channel OTFTs and their integration into a stable CMOS inverter

S. Bebiche , I. Bouhadda , T. Mohammed-Brahim , N. Coulon , Jean-Francois Bergamini et al.
Solid-State Electronics, 2017, 130, pp.49--56. ⟨10.1016/j.sse.2017.01.009⟩
Journal articles hal-01484527v1

Annealing effect on the electrical properties of IF (CN2)2-meta based OTFTs Thermal behavior and modeling of charge transport (vol 123, pg 286, 2018)

N. Arfaoui , M. Mandouani , I. Bouhadda , Cyril Poriel , R. Bourguiga et al.
Superlattices and Microstructures, 2019, 125, pp.80-80. ⟨10.1016/j.spmi.2018.10.021⟩
Journal articles hal-02049418v1
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Annealing effect on the electrical proprieties of IF(CN2)2-meta based OTFTs: Thermal behavior and modeling of charge transport

Nawel Arfaoui , M. Mahdouani , I. Bouhadda , Cyril Poriel , R. Bourguiga et al.
Superlattices and Microstructures, 2018, 123, pp.286 - 296. ⟨10.1016/j.spmi.2018.09.011⟩
Journal articles hal-01928239v1