Comparison of the electrical behavior in the subthreshold region between laser and solid phase crystallized polysilicon thin film transistors - Université de Rennes Accéder directement au contenu
Article Dans Une Revue Solid-State Electronics Année : 2002

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hal-03776568 , version 1 (13-09-2022)

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L. Pichon, A. Mercha, R. Carin, T. Mohammed-Brahim, O. Bonnaud, et al.. Comparison of the electrical behavior in the subthreshold region between laser and solid phase crystallized polysilicon thin film transistors. Solid-State Electronics, 2002, 46 (4), pp.459-466. ⟨10.1016/S0038-1101(01)00324-0⟩. ⟨hal-03776568⟩
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