Performance of thin film Transistors on Unhydrogenated In-Situ Doped Polysilicon films Obtained by Solid Phase Crystallization - Université de Rennes Accéder directement au contenu
Article Dans Une Revue MRS Proceedings Année : 1997

Performance of thin film Transistors on Unhydrogenated In-Situ Doped Polysilicon films Obtained by Solid Phase Crystallization

K. Mourgues
  • Fonction : Auteur
F. Raoult
  • Fonction : Auteur
T. Mohammed-Brahim
  • Fonction : Auteur
D. Briand
  • Fonction : Auteur
O. Bonnaud
  • Fonction : Auteur

Résumé

ABSTRACT Low Temperature Unhydrogenated in-situ doped polysilicon Thin Film Transistors (LTUTFT) are made through two types of four-mask aluminium gate process. Silicon layers are elaborated by a Low Pressure Chemical Vapor Deposition (LPCVD) method and crystallized by a thermal annealing. Source and drain regions are in-situ doped. An Atmospheric Pressure Chemical Vapor Deposition (APCVD) silicon dioxide ensures the gate insulation. Two structures A and B are fabricated, the difference is that for sample B the undoped/doped polysilicon layer interface is suppressed. The structure of the polysilicon films is studied using Transmission Electron Microscopy (TEM) and Current-Voltage characteristics of both types of TFTs indicate electrical quality of the polysilicon films. The best electrical properties are obtained with the B type TFTs: a low threshold voltage (V T =1.2V), a low subthreshold slope (0.7 V/dec), a high On/Off state current ratio (10 7 ) for a drain voltage V DS = 1V, and a very high field effect mobility (≥100 cm 2 /Vs). It is worth to notice that these good results are obtained without hydrogenation.
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hal-03662121 , version 1 (09-05-2022)

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Citer

K. Mourgues, F. Raoult, L. Pichon, T. Mohammed-Brahim, D. Briand, et al.. Performance of thin film Transistors on Unhydrogenated In-Situ Doped Polysilicon films Obtained by Solid Phase Crystallization. MRS Proceedings, 1997, 471, pp.155. ⟨10.1557/PROC-471-155⟩. ⟨hal-03662121⟩
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