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Article Dans Une Revue Advanced Materials Année : 2022

Heterojunction Annealing Enabling Record Open-Circuit Voltage in Antimony Triselenide Solar Cells

Résumé

Despite the fact that antimony triselenide (Sb(2) Se(3) ) thin-film solar cell has undergone rapid development in recent years, the large open-circuit voltage (V(OC) ) deficit still remains to be the biggest bottleneck as even the world record device suffers from a large V(OC) deficit of 0.59 V. Here, an effective interface engineering approach is reported where the Sb(2) Se(3) /CdS heterojunction (HTJ) was subjected to a post-annealing treatment using rapid thermal process. It was found that non-radiative recombination near the Sb(2) Se(3) /CdS HTJ including interface recombination and space charge region recombination were greatly suppressed after the HTJ annealing treatment. Ultimately, a substrate Sb(2) Se(3) /CdS thin-film solar cell with a competitive power conversion efficiency of 8.64% and a record V(OC) of 0.52 V has been successfully fabricated. The device exhibits a much mitigated V(OC) deficit of 0.49 V, which is lower than that of any other reported efficient antimony chalcogenide solar cell. This article is protected by copyright. All rights reserved.
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Dates et versions

hal-03555331 , version 1 (15-06-2023)

Identifiants

Citer

Rong Tang, Shuo Chen, Zhuang-Hao Zheng, Zheng-Hua Su, Jing-Ting Luo, et al.. Heterojunction Annealing Enabling Record Open-Circuit Voltage in Antimony Triselenide Solar Cells. Advanced Materials, 2022, 34 (14), pp.2109078. ⟨10.1002/adma.202109078⟩. ⟨hal-03555331⟩
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