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Article Dans Une Revue Materials Letters Année : 2022

In-situ growth of high room temperature thermoelectric performance Ag2Se thin films

Junyu Niu
  • Fonction : Auteur
Tianbao Chen
  • Fonction : Auteur
Hongli Ma
Xianghua Zhang
Ping Fan
  • Fonction : Auteur
Zhuanghao Zheng
  • Fonction : Auteur correspondant

Résumé

In this work, well-crystalline Ag2Se thermoelectric thin film with high power factor at room temperature was successfully fabricated at solid substrate by a facile in-situ growth method via co-evaporation deposition. Microstructure characterizations show that the thin films prepared under proper growth temperature have single alpha-Ag2Se phase and stable chemical valence states, leading to a high electrical conductivity. Additionally, the carrier concentration is optimized after adjusting growth temperature and further contributes to a high Seebeck coefficient. As a result, a maximum power factor of 15.34 mu Wcm(-1)K(-2) is achieved, demonstrating that our in-situ growth method is an effective way to fabricate high performance Ag2Se thermoelectric thin films.
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Dates et versions

hal-03553233 , version 1 (15-06-2023)

Identifiants

Citer

Junyu Niu, Tianbao Chen, Guangxing Liang, Hongli Ma, Xianghua Zhang, et al.. In-situ growth of high room temperature thermoelectric performance Ag2Se thin films. Materials Letters, 2022, 312, pp.131662. ⟨10.1016/j.matlet.2022.131662⟩. ⟨hal-03553233⟩
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