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Article Dans Une Revue Crystal Growth & Design Année : 2021

Strain-assisted topochemical synthesis of la-doped SrVO2H Films

H. Takatsu
  • Fonction : Auteur correspondant
M. Ochi
  • Fonction : Auteur
M. Namba
  • Fonction : Auteur
H. Li
  • Fonction : Auteur
T. Terashima
  • Fonction : Auteur
H. Kageyama
  • Fonction : Auteur correspondant

Résumé

Perovskite oxyhydride SrVO2H (V3+, d2) is a Mott insulator with a strong two-dimensional correlation due to anion ordering. In this study, we attempted electron doping by aliovalent substitution. Although Sr1-xLaxVO3 thin films (x ≤ 0.4) on a SrTiO3 substrate were topochemically reduced using CaH2, vanadium of the reduced films retained the trivalent state. Combined with the results of secondary ion mass spectroscopy, we conclude that Sr1-xLaxVO2+xH1-x is obtained, where the apical oxygen site is partially replaced by hydride anions. First-principles theoretical calculations highlight the role played by compressive biaxial strain in stabilizing the charge-compensated Sr1-xLaxVO2+xH1-x phase, rather than the electron-doped Sr1-xLaxVO2H. The present study demonstrates that topochemical reactions combined with substrate strain provide various opportunities to widen the compositional space in mixed-anion compounds. ©

Dates et versions

hal-03336990 , version 1 (07-09-2021)

Identifiants

Citer

H. Takatsu, M. Ochi, M. Namba, H. Li, A. Daniel, et al.. Strain-assisted topochemical synthesis of la-doped SrVO2H Films. Crystal Growth & Design, 2021, 21 (7), pp.3779-3785. ⟨10.1021/acs.cgd.1c00098⟩. ⟨hal-03336990⟩
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