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Communication Dans Un Congrès Année : 2020

Investigation on icp-cvd as a polyvalent low cost technology dedicated to low temperature μ-si tft prototyping.

Résumé

A Corial Inductively Coupled Plasma Chemical Vapor Deposition (ICP-CVD) system has been investigated to produce un-doped and doped μ-Si layers, as well as insulators, leading to a general capability of performing N and P type TFTs. This enables to develop rapid prototyping of TFTs. Resistivity of layers and TFT issues from ICP-CVD have been electrically characterized. © 2020 SID.
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Dates et versions

hal-03003564 , version 1 (13-11-2020)

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O. de Sagazan, A. Uvarov, E. Bestelink, R A Sporea, Emmanuel Jacques. Investigation on icp-cvd as a polyvalent low cost technology dedicated to low temperature μ-si tft prototyping.. 57th SID International Symposium, Seminar and Exhibition, Display Week, 2020, Aug 2020, San Jose, United States. pp.1538-1541, ⟨10.1002/sdtp.14182⟩. ⟨hal-03003564⟩
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