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Article Dans Une Revue ACS Applied Materials & Interfaces Année : 2020

Fundamental Physical Characterization of SbSe-Based Quasi-Homojunction Thin Film Solar Cells

Résumé

A new type of solar cell based on Cu-doped (p-type) and I-doped (n-type) SbSe has been designed and fabricated using magnetron sputtering with two different thicknesses of absorber. The overall objective is for better understanding the charge recombination mechanism, especially at the interface region. The investigation has been specifically performed using IMPS (intensity modulated photocurrent spectroscopy), IMVS (intensity modulated photovoltage spectroscopy), and diode characterizations. It has been found that an increase of the absorber thickness leads to a shorter carrier lifetime, but longer diffusion length and lower trap density, resulting in significantly better performance. Furthermore, it is demonstrated that trap-assisted recombination does not affect the short-circuit current density (<i>J</i>), but significantly decreases the open-circuit voltage (<i>V</i>). As a result, an encouraging power conversion efficiency (PCE) of 2.41%, fill factor (FF) of 41%, <i>J</i> of 20 mA/cm, and <i>V</i> of 294 mV are obtained. Most importantly, key parameters for further increasing the PCE have been identified.

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Chimie
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Dates et versions

hal-02890139 , version 1 (06-07-2020)

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Donglou Ren, Shuo Chen, Michel Cathelinaud, Guang-Xing Liang, Hongli Ma, et al.. Fundamental Physical Characterization of SbSe-Based Quasi-Homojunction Thin Film Solar Cells. ACS Applied Materials & Interfaces, 2020, 12 (27), pp.30572-30583. ⟨10.1021/acsami.0c08180⟩. ⟨hal-02890139⟩
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