New paradigms are required in microelectronics when the transistor is in its downscaling limit and integration of materials presenting functional properties not available in classical silicon is one of the promising alternatives. Here, we demonstrate the possibility to grow LaSrMnO (LSMO) functional materials on amorphous substrates with properties close to films grown on single-crystalline substrates using a two-dimensional seed layer. X-ray diffraction and electron backscatter diffraction mapping demonstrate that the CaNbO nanosheet (NS) layer induces epitaxial stabilization of LSMO films with a strong out-of-plane (001) texture, whereas the growth of LSMO films on uncoated glass substrates exhibits a nontextured polycrystalline phase. The magnetic properties of LSMO films deposited on NS are similar to those of the LSMO grown on SrTiO single-crystal substrates in the same conditions (which is used as a reference in this work). Moreover, transport measurements take advantages of the texture and polycrystalline properties to induce low-field magnetoresistance at low temperature and also a high value of 40% magnetoresistance from 10 to 300 K, making it interesting for sensor applications. Therefore, the NS seed layer offers new perspectives for the integration of functional materials grown at moderate temperatures on any substrate, which will be the key for the development of oxitronics.