Degree of polarization of the photo-luminescence and cathodo-luminescence for plasma etched InP and GaAs under control of the built-in mechanical stress in SiNx mask layer - Université de Rennes Accéder directement au contenu
Communication Dans Un Congrès Année : 2019

Degree of polarization of the photo-luminescence and cathodo-luminescence for plasma etched InP and GaAs under control of the built-in mechanical stress in SiNx mask layer

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hal-02291428 , version 1 (18-09-2019)

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  • HAL Id : hal-02291428 , version 1

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Solène Gérard, Merwan Mokhtari, Jean-Pierre Landesman, Christophe Levallois, Marc Fouchier, et al.. Degree of polarization of the photo-luminescence and cathodo-luminescence for plasma etched InP and GaAs under control of the built-in mechanical stress in SiNx mask layer. 18th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors (DRIP XVIII), Sep 2019, Berlin, Germany. ⟨hal-02291428⟩
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