Impact of mode-hopping noise on InGaN edge emitting laser RIN properties - Université de Rennes Accéder directement au contenu
Communication Dans Un Congrès Année : 2016

Impact of mode-hopping noise on InGaN edge emitting laser RIN properties

Résumé

In this study we report through a comparative analysis of optical spectrum, L-I curve and relative intensity noise (RIN) measurement, the impact of mode hopping on the overall intensity noise dynamics of InGaN edge emitting lasers. We reveal that this mode hopping contributes to the enhancement of the laser RIN with variation as large as 20 dB for pumping level above twice the laser threshold. The coexistence of longitudinal modes with modal gain in excess of the gain threshold induces few modes lasing and then mode competition. The subsequent enhancement of the RIN can be detrimental for applications where the intensity stability of InGaN lasers is a key parameter.
Fichier principal
Vignette du fichier
IWN.pdf (832.04 Ko) Télécharger le fichier
Origine : Fichiers produits par l'(les) auteur(s)

Dates et versions

hal-01959559 , version 1 (18-12-2018)

Identifiants

  • HAL Id : hal-01959559 , version 1

Citer

Antoine Congar, Kamal Hussain, Christelle Pareige, Jean-Michel Lamy, Eric Feltin, et al.. Impact of mode-hopping noise on InGaN edge emitting laser RIN properties. 2016 International Workshop on Nitride Semiconductors (IWN 2016), Oct 2016, Orlando, United States. ⟨hal-01959559⟩
30 Consultations
25 Téléchargements

Partager

Gmail Facebook X LinkedIn More