@article{bebiche:hal-01881024, TITLE = {{Influence of the gate bias stress on the stability of n-type organic field-effect transistors based on dicyanovinylene-dihydroindenofluorene semiconductors}}, AUTHOR = {Bebiche, S. and Cisneros-Perez, P.A. and Mohammed-Brahim, T. and Harnois, M. and Rault-Berthelot, J. and Poriel, Cyril and Jacques, E.}, URL = {https://univ-rennes.hal.science/hal-01881024}, JOURNAL = {{Materials Chemistry Frontiers}}, PUBLISHER = {{Royal Society of Chemistry}}, VOLUME = {2}, NUMBER = {9}, PAGES = {1631-1641}, YEAR = {2018}, DOI = {10.1039/c8qm00193f}, KEYWORDS = {Insulator Charge Trapping ; Gate Bias Stress ; Dicyanovinylene-Dihydroindenofluorene ; Leakage Current ; n-type Organic Field-Effect Transistors ; Electrical Instability}, PDF = {https://univ-rennes.hal.science/hal-01881024/file/Publi%20sarah%20remodelage%20cyrilVManu-final%20revised.pdf}, HAL_ID = {hal-01881024}, HAL_VERSION = {v1}, }