%0 Journal Article %T X-ray photoelectron spectroscopy analysis of Ge-Sb-Se pulsed laser deposited thin films %+ University of Pardubice %+ Institut des Matériaux Jean Rouxel (IMN) %+ Institut des Sciences Chimiques de Rennes (ISCR) %A Baudet, Emeline %A Cardinaud, Christophe %A Boidin, Remi %A Girard, Aurelie %A Gutwirth, Jan %A Nemec, Petr %A Nazabal, Virginie %Z Czech Science Foundation [16-17921S] %Z Czech Ministry of Education, Youth and Sports of the Czech Republic [LM2015082, CZ.1.05/4.1.00/11.0251, 7AMB17FR058] %Z French Ministry of Education and Research %< avec comité de lecture %@ 0002-7820 %J Journal of the American Ceramic Society %I Wiley %V 101 %N 8 %P 3347-3356 %8 2018 %D 2018 %R 10.1111/jace.15512 %K amorphous %K chalcogenides %K films %K glass %K physical vapor deposition %Z Chemical Sciences %Z Chemical Sciences/Material chemistryJournal articles %X Pulsed laser deposition was used to prepare amorphous thin films from (GeSe2)(100-x)(Sb2Se3)(x) system (x=0, 5, 10, 20, 30, 40, 50, and 60). From a wide variety of chalcogenide glass-forming systems, Ge-Sb-Se one, especially in thin films form, already proved to offer a great potential for photonic devices such as chemical sensors. This system has a large glass-forming region which gives the possibility to adjust the chemical composition of the glasses according to required physical characteristics. The chemical composition of fabricated thin films was analyzed via X-ray photoelectron spectroscopy (XPS) and compared to energy dispersive spectroscopy (EDS) data. The results of both techniques agree well a small deficiency in chalcogen element and an excess of antimony was found. The structure of as-deposited thin films has been investigated by XPS. The presence of the two main structural units, [GeSe4] and [SbSe3] proposed by Raman scattering spectroscopy data analysis, was confirmed by XPS. Moreover, XPS core level spectra analysis revealed the presence of M-M bonds (M=Ge, Sb) in (Ge,Sb)-Ge-(Se)(3) and (Ge,Sb)-Sb-(Se)(2) entities that could correspond to Ge-based tetrahedra and Sb-based pyramids where one of its Se atoms at corners is substituted by Ge or Sb ones. The content of depicted M-M bonds tends to increase with introduction of antimony in the amorphous network of as-deposited thin films from x=0 to x=40 and then it decreases. XPS analysis of as-deposited thin films shows also the presence of the (Ge,Sb)-Se-(Ge,Sb) and Se-Se-(Ge,Sb) entities. %G English %2 https://univ-rennes.hal.science/hal-01833232/document %2 https://univ-rennes.hal.science/hal-01833232/file/Baudet%20et%20al_X-ray%20Photoelectron%20Spectroscopy%20analysis%20of%20Ge-Sb-Se%20pulsed%20laser%20deposited.pdf %L hal-01833232 %U https://univ-rennes.hal.science/hal-01833232 %~ UNIV-NANTES %~ UNIV-RENNES1 %~ CNRS %~ INSA-RENNES %~ ENSC-RENNES %~ IMN %~ ISCR %~ SCR_VC %~ STATS-UR1 %~ PCM %~ UR1-SPM %~ INC-CNRS %~ UR1-UFR-SPM %~ UR1-HAL %~ UR1-SDLM %~ IVER %~ TEST-UR-CSS %~ UNIV-RENNES %~ INSA-GROUPE %~ TEST-HALCNRS %~ UR1-MMS %~ NANTES-UNIVERSITE %~ UNIV-NANTES-AV2022 %~ TEST2-HALCNRS %~ TEST3-HALCNRS