8 mu m luminescence from a Tb3+ GaGeSbSe fiber - Université de Rennes
Article Dans Une Revue Optics Letters Année : 2018

8 mu m luminescence from a Tb3+ GaGeSbSe fiber

Résumé

In this Letter, we report for the first time, to the best of our knowledge, on an emission at 8 μm from Tb-doped GaGeSbSe chalcogenide fibers with doping levels at 1000 ppm and 500 ppm. These fibers were drawn following conventional melt-quenching methods and pumped at 2.05 μm using a Tm: YAG laser. The spectroscopic properties of the emitting F7 manifold are investigated to rule out any parasitic signal mimicking the real Tb 8 μm emission. Time-resolved spectroscopic experiments are presented to build a comprehensive study of this 8 μm fluorescence recorded with a clear signal-to-noise ratio.

Domaines

Chimie
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Dates et versions

hal-01771092 , version 1 (19-04-2018)

Identifiants

Citer

Florent Starecki, Nora Abdellaoui, A. Braud, Jean-Louis Doualan, Catherine Boussard-Plédel, et al.. 8 mu m luminescence from a Tb3+ GaGeSbSe fiber. Optics Letters, 2018, 43 (6), pp.1211-1214. ⟨10.1364/OL.43.001211⟩. ⟨hal-01771092⟩
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