Depth analysis of boron diffusion in MgO/CoFeB bilayer by x-ray photoelectron spectroscopy
Résumé
We have studied the boron B diffusion in MgO/CoFeB bilayer by x-ray photoelectron
spectroscopy depth analysis. A large concentration of B B/Mg=0.16 was found to diffuse into the
MgO barrier after 350 °C annealing. The boron in MgO is in a highly oxidized B3+ state and is
homogenously distributed in the whole barrier. The important B diffusion in MgO could be related
to the CoFeB crystallization process which begins from the under CoFeB/Ru interface and pushes
boron atoms to diffuse into the MgO barrier during annealing.
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