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Article Dans Une Revue Journal of Applied Physics Année : 2010

Depth analysis of boron diffusion in MgO/CoFeB bilayer by x-ray photoelectron spectroscopy

Résumé

We have studied the boron B diffusion in MgO/CoFeB bilayer by x-ray photoelectron spectroscopy depth analysis. A large concentration of B B/Mg=0.16 was found to diffuse into the MgO barrier after 350 °C annealing. The boron in MgO is in a highly oxidized B3+ state and is homogenously distributed in the whole barrier. The important B diffusion in MgO could be related to the CoFeB crystallization process which begins from the under CoFeB/Ru interface and pushes boron atoms to diffuse into the MgO barrier during annealing.
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Dates et versions

hal-01760553 , version 1 (06-04-2018)

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Yuan Lu, B. Lépine, G. Jezequel, S. Ababou, M. Alnot, et al.. Depth analysis of boron diffusion in MgO/CoFeB bilayer by x-ray photoelectron spectroscopy. Journal of Applied Physics, 2010, 108 (043703), pp.043703. ⟨10.1063/1.3465308⟩. ⟨hal-01760553⟩
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