@article{zheng:hal-01639690, TITLE = {{Optimization in fabricating skutterudite CoSb3 thermoelectric thin films}}, AUTHOR = {Zheng, Z.-H. and Wei, M. and Li, F. and Luo, J.-T. and Ma, H.-L. and Liang, G.-X. and Zhang, X.-H. and Fan, P.}, URL = {https://univ-rennes.hal.science/hal-01639690}, JOURNAL = {{Journal of Materials Science: Materials in Electronics}}, PUBLISHER = {{Springer Verlag}}, VOLUME = {28}, NUMBER = {22}, PAGES = {17221-17226}, YEAR = {2017}, DOI = {10.1007/s10854-017-7652-5}, KEYWORDS = {Annealing ; Antimony ; Cobalt ; Film preparation ; Phase structure ; Skutterudites ; Sputtering ; Thermoelectricity ; X ray diffraction ; Argon atmospheres ; As-deposited thin films ; Atomic ratio ; Impurity phasis ; Radio frequency sputtering ; Temperature intervals ; Thermoelectric performance ; Thermoelectric thin films ; Thin films}, HAL_ID = {hal-01639690}, HAL_VERSION = {v1}, }