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Communication Dans Un Congrès Année : 2016

3D GaP/Si(001) growth mode and antiphase boundaries

Simon Charbonnier
M. Bahri
L. Largeau
Pascal Turban
  • Fonction : Auteur
  • PersonId : 896
  • IdHAL : pturban

Résumé

In this work, we investigate the relationship between the surface roughness and antiphase domains in GaP layers grown by MBE on a vicinal Si (001) substrate. The main role of the starting Si surface before III‐V overgrowth is first discussed. Structural properties of antiphase domains (APDs) are investigated at the atomic scale by Scanning Tunneling Microscopy (STM) and Transmission Electron Microscopy (TEM). The correlation between the 3D growth mode and the emerging antiphase boundaries (APBs) is discussed in terms of surface/interface energy, supported by DFT calculations.
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Dates et versions

hal-01497144 , version 1 (28-03-2017)

Identifiants

  • HAL Id : hal-01497144 , version 1

Citer

Ida Lucci, Simon Charbonnier, Yanping Wang, M. Bahri, Maxime Vallet, et al.. 3D GaP/Si(001) growth mode and antiphase boundaries. 19th International Conference on Molecular-Beam Epitaxy (IC-MBE 2016), Sep 2016, Montpellier, France. ⟨hal-01497144⟩
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