Composition dependent nature of the fundamental optical transition in (In,Ga)As/GaP quantum dots - Université de Rennes Accéder directement au contenu
Communication Dans Un Congrès Année : 2014

Composition dependent nature of the fundamental optical transition in (In,Ga)As/GaP quantum dots

Sylvain Tricot
Pascal Turban
  • Fonction : Auteur
  • PersonId : 896
  • IdHAL : pturban
Paul Koenraad
  • Fonction : Auteur
  • PersonId : 871246

Résumé

The nature of the ground optical transition in (In, Ga)As/GaP quantum dots is thoroughly investigated through k·p calculations and a supercell tight-binding simulation. Quantum dot morphology is deduced from scanning-tunneling-microscopy images. The strain field has a strong influence on the conduction band states. Indeed, for a pure GaAs QD, the wavefunction of the ground electron state is spatially confined in the GaP matrix, close to the dot apex, in a tensile strain region, having mainly Xz character. Time resolved and hydrostatic pressure photoluminescence experiments strongly support the theoretical conclusions. Promising results from the literature on (In, Ga)As/GaP quantum dot will be reviewed.
Fichier non déposé

Dates et versions

hal-01114877 , version 1 (10-02-2015)

Identifiants

Citer

Cédric Robert Robert, Charles Cornet, Thanh Tra Nguyen, M. Nestoklon, Katiane Pereira da Silva, et al.. Composition dependent nature of the fundamental optical transition in (In,Ga)As/GaP quantum dots. 26th International Conference on Indium Phosphide and Related Materials (IPRM 2014), May 2014, Montpellier, France. pp.Th-B1-2, ⟨10.1109/ICIPRM.2014.6880555⟩. ⟨hal-01114877⟩
201 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More