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Article Dans Une Revue Nanotechnology Année : 2014

Spin transport in dangling-bond wires on doped H-passivated Si(100).

Roberto Robles
Riccardo Rurali
  • Fonction : Auteur

Résumé

New advances in single-atom manipulation are leading to the creation of atomic structures on H-passivated Si surfaces with functionalities important for the development of atomic and molecular based technologies. We perform total-energy and electron-transport calculations to reveal the properties and understand the features of atomic wires crafted by H removal from the surface. The presence of dopants radically change the wire properties. Our calculations show that dopants have a tendency to approach the dangling-bond wires, and in these conditions, transport is enhanced and spin selective. These results have important implications in the development of atomic-scale spintronics showing that boron, and to a lesser extent phosphorous, convert the wires in high-quality spin filters.

Dates et versions

hal-01102080 , version 1 (12-01-2015)

Identifiants

Citer

Mikaël Kepenekian, Roberto Robles, Riccardo Rurali, Nicolás Lorente. Spin transport in dangling-bond wires on doped H-passivated Si(100).. Nanotechnology, 2014, 25 (46), pp.465703. ⟨10.1088/0957-4484/25/46/465703⟩. ⟨hal-01102080⟩
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