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Article Dans Une Revue Applied physics. A, Materials science & processing Année : 2014

Pulsed laser deposition of rare-​earth-​doped gallium lanthanum sulphide chalcogenide glass thin films

Résumé

Amorphous chalcogenide thin films are of high current interest for technol. applications as optical storage media or waveguides for photonic integrated circuits. As part of a larger project including fs, ps and ns pulsed laser deposition regimes, Er- and Pr-​doped GLS thin films were deposited by ns PLD, and their structural, chem. and optical properties were analyzed by optical and electronic microscopy, stylus profilometry, X-​ray diffraction, Raman spectroscopy, time-​of-​flight secondary ion mass spectrometry (TOF-​SIMS)​, energy-​dispersive X-​ray spectroscopy, variable-​angle spectroscopic ellipsometry and optical transmission. Films deposited at moderate fluence (∼4 J​/cm2) in UV (266 nm) presented a good surface quality, while exhibiting acceptable compn. uniformity and deviations from stoichiometry in line with the literature. Compn. and optical properties dependences on the deposition conditions were investigated and discussed with respect to previous studies on similar systems.

Domaines

Matériaux
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Dates et versions

hal-01018968 , version 1 (07-07-2014)

Identifiants

Citer

Gloria Oana Pompilian, G. Dascalu, I. Mihaila, S. Gurlui, Mélinda Olivier, et al.. Pulsed laser deposition of rare-​earth-​doped gallium lanthanum sulphide chalcogenide glass thin films. Applied physics. A, Materials science & processing, 2014, 117 (1), pp.197-205. ⟨10.1007/s00339-014-8359-6⟩. ⟨hal-01018968⟩
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