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Article Dans Une Revue Jpn J. of Appl. Phys Année : 2005

Selective Epitaxial Growth for Buried Microchannels in Monocrystalline Silicon

Résumé

A simple and single-step technique is presented for the formation of buried channels in monocrystalline silicon wafers. The channels are formed by surface migration of silicon during the selective epitaxial growth of monocrystalline silicon. Various buried-channel shapes and sizes from 1 to 30 µm were formed. This technique is compatible with semiconductor industry processes and allows postprocessing for the integration of microelectronics circuits. The applications targeting heat pipes for integrated circuits or microfluidic channels for microsystems are numerous and promising.

Domaines

Electronique
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Dates et versions

hal-00984736 , version 1 (28-04-2014)

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Citer

Matthieu Denoual, Olivier de Sagazan, Maryline Guilloux-Viry, Denis Gaudin. Selective Epitaxial Growth for Buried Microchannels in Monocrystalline Silicon. Jpn J. of Appl. Phys, 2005, 44 (7A), pp.5269-5271. ⟨10.1143/JJAP.44.5269⟩. ⟨hal-00984736⟩
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