Nature of the optical transition in (In,Ga)As(N)/GaP quantum dots (QDs): effect of QD size, indium composition and nitrogen incorporation - Université de Rennes Accéder directement au contenu
Poster De Conférence Année : 2013

Nature of the optical transition in (In,Ga)As(N)/GaP quantum dots (QDs): effect of QD size, indium composition and nitrogen incorporation

Pascal Turban
  • Fonction : Auteur
  • PersonId : 896
  • IdHAL : pturban
S. Mauger
  • Fonction : Auteur
Sylvain Tricot
Philippe Barate
  • Fonction : Auteur
  • PersonId : 865444
Paul Koenraad
  • Fonction : Auteur
  • PersonId : 871246

Résumé

The structural properties of (In,Ga)As/GaP quantum dots (QDs) are studied by plane view and cross scanning tunneling microscopy. Time-resolved and pressure dependent photoluminescence experiments show a ground optical transition of indirect type. Mixed k.p/tight-binding simulations indicate a possible indirect to direct crossover depending on indium content and QD size. The incorporation of nitrogen in QDs is finally shown.
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Dates et versions

hal-00918662 , version 1 (13-12-2013)

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Cédric Robert Robert, Charles Cornet, K. Pereira da Silva, Pascal Turban, S. Mauger, et al.. Nature of the optical transition in (In,Ga)As(N)/GaP quantum dots (QDs): effect of QD size, indium composition and nitrogen incorporation. 25th International Conference on Indium Phosphide and Related Materials (IPRM2013), May 2013, Kobe, Japan. IEEE (ISSN: 1092-8669 ; e-ISBN: 978-1-4673-6131-6 ; Print ISBN: 978-1-4673-6130-9), IEEE Xplore Digital Library, pp.1-2, 2013, International Conference on Indium Phosphide and Related Materials (IPRM), 2013. ⟨10.1109/ICIPRM.2013.6562587⟩. ⟨hal-00918662⟩
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