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Article Dans Une Revue Applied Physics Letters Année : 2007

Transport property study of MgO-GaAs(001) contacts for spin injection devices

Résumé

The electrical properties of Au/MgO/n-GaAs(001) tunnel structures have been investigated with capacitance-voltage and current-voltage measurements at room temperature with various MgO thicknesses between 0.5 and 6.0nm. For an oxide thickness higher than 2nm and for low bias voltages, the voltage essentially drops across the oxide and the structure progressively enters the high-current mode of operation with increasing reverse bias voltage, the property sought in spin injection devices. In this mode, we demonstrate that a large amount of charge accumulates at the MgO/GaAsinterface in interface traps located in the semiconductor band gap.
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Dates et versions

hal-00908143 , version 1 (22-11-2013)

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Jean-Christophe Le Breton, S. Le Gall, Guy Jézéquel, Bruno Lépine, Philippe Schieffer, et al.. Transport property study of MgO-GaAs(001) contacts for spin injection devices. Applied Physics Letters, 2007, 91 (17), pp.172112. ⟨10.1063/1.2802727⟩. ⟨hal-00908143⟩
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