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Article Dans Une Revue Journal of the American Ceramic Society Année : 2013

Correlation between crystallization behavior and network structure in GeS2-Ga2S3-Csl chalcogenide glasses

Résumé

Diagram of the phase transformation behavior of GeS2-Ga2S3-CsI glasses is realized in this article and the structure-property dependence of the chalcogenide glasses is elucidated using differential scanning calorimetry and Raman spectroscopy. We observe the compositional threshold of crystallization behavior locates at x = 6-7 mol% in (100−x)(0.8GeS2-0.2Ga2S3)-xCsI glasses, which is confirmed by the thermodynamic studies. Structural motifs are derived from the Raman result that [Ge(Ga)S4], [S2GeI2], [S3GaI], and [S3Ga-GaS3] were identified to exist in this glass network. Combined with the information of structural threshold, local arrangement of these structural motifs is proposed to explain all the experimental observations, which provides a new way to understand the correlation between crystallization behavior and network structure in chalcogenide glasses.

Domaines

Matériaux

Dates et versions

hal-00862280 , version 1 (16-09-2013)

Identifiants

Citer

Changgui Lin, Guoshun Qu, Zhuobin Li, S. Dai, Tie-Feng Xu, et al.. Correlation between crystallization behavior and network structure in GeS2-Ga2S3-Csl chalcogenide glasses. Journal of the American Ceramic Society, 2013, 96 (6), pp.1779-1782. ⟨10.1111/jace.12394⟩. ⟨hal-00862280⟩
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