Development of (GeSe2)100-x (Sb2Se3)x glasses and sputtered films for micro-sensors devices - Université de Rennes Accéder directement au contenu
Communication Dans Un Congrès Année : 2013

Development of (GeSe2)100-x (Sb2Se3)x glasses and sputtered films for micro-sensors devices

Résumé

We prepared (GeSe2)100-x(Sb2Se3)x thin films with different sputtering parameters. Chalcogenide thin films were also characterized by studying their chemical composition, topography, morphology structure and refractive index in order to fabricate planar waveguide suitable for mid-IR

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Dates et versions

hal-00846728 , version 1 (19-07-2013)

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  • HAL Id : hal-00846728 , version 1

Citer

Emeline Baudet, Virginie Nazabal, Emmanuel Rinnert, Florent Colas, Chantal Compère, et al.. Development of (GeSe2)100-x (Sb2Se3)x glasses and sputtered films for micro-sensors devices. E-MRS 2013 FALL MEETING, Jul 2013, Warsaw, Poland. ⟨hal-00846728⟩
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