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Article Dans Une Revue Applied Physics Letters Année : 2011

Transport mechanisms in MgO/GaAs(001) delta-doped junctions

S. Le Gall
Bruno Lépine
Gabriel Delhaye
Guy Jézéquel
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Pascal Turban
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Philippe Schieffer

Résumé

The transport mechanisms through MgO ultrathin layers (0.5-1.2 nm) deposited on n-type doped GaAs(001) layers have been studied. In order to favor field emission (FE) across the junctions, a high doping concentration layer in vicinity of the semiconductor surfaces has been included. Varying doping concentration of the underlying GaAs layer we find that the dominant transport mechanism is either the variable-range hopping mechanism or a thermionic emission-like process instead of the FE process. The observation of such mechanisms can be explained by the fact that during the MgO deposition, defect states are introduced in the semiconductor band gap.
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Dates et versions

hal-00732777 , version 1 (13-03-2020)

Identifiants

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S. Le Gall, Bruno Lépine, Gabriel Delhaye, Guy Jézéquel, Pascal Turban, et al.. Transport mechanisms in MgO/GaAs(001) delta-doped junctions. Applied Physics Letters, 2011, 98 (11), pp.112108. ⟨10.1063/1.3567948⟩. ⟨hal-00732777⟩
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