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Article Dans Une Revue Applied Physics Letters Année : 2012

Anisotropic magneto-resistance in a GaMnAs-based single impurity tunnel diode: A tight binding approach

O. Krebs
H. Jaffrès
S. Ruttala
  • Fonction : Auteur
J.-M. George

Résumé

Using an advanced tight-binding approach, we estimate the anisotropy of the tunnel transmission associated with the rotation of the 5/2 spin of a single Mn atom forming an acceptor state in GaAs and located near an AlGaAs tunnel barrier. Significant anisotropies in both in-plane and out-of-plane geometries are found, resulting from the combination of the large spin-orbit coupling associated with the p-d exchange interaction, cubic anisotropy of heavy-hole dispersion and the low C2v symmetry of the chemical bonds.

Dates et versions

hal-00726682 , version 1 (31-08-2012)

Identifiants

Citer

M. O. Nestoklon, O. Krebs, H. Jaffrès, S. Ruttala, J.-M. George, et al.. Anisotropic magneto-resistance in a GaMnAs-based single impurity tunnel diode: A tight binding approach. Applied Physics Letters, 2012, 100, pp.062403. ⟨10.1063/1.3683525⟩. ⟨hal-00726682⟩
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