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Article Dans Une Revue Applied Physics Letters Année : 2011

Growth-in-place deployment of in-plane silicon nanowires

Résumé

Up-scaling silicon nanowire (SiNW)-based functionalities requires a reliable strategy to precisely position and integrate individual nanowires. We here propose an all-in-situ approach to fabricate self-positioned/aligned SiNW, via an in-plane solid-liquid-solid growth mode. Prototype field effect transistors, fabricated out of in-plane SiNWs using a simple bottom-gate configuration, demonstrate a hole mobility of 228 cm2/V s and on/off ratio >103. Further insight into the intrinsic doping and structural properties of these structures was obtained by laser-assisted 3 dimensional atom probe tomography and high resolution transmission electron microscopy characterizations. The results could provide a solid basis to deploy the SiNW functionalities in a cost-effective way.
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Dates et versions

hal-00671028 , version 1 (16-02-2012)

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Linwei Yu, Wanghua Chen, Benedict O'Donnell, Gilles Patriarche, Sophie Bouchoule, et al.. Growth-in-place deployment of in-plane silicon nanowires. Applied Physics Letters, 2011, 99, pp.203104. ⟨10.1063/1.3659895⟩. ⟨hal-00671028⟩
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