Spin-polarized inelastic tunneling through insulating barriers. - Université de Rennes Accéder directement au contenu
Article Dans Une Revue Physical Review Letters Année : 2009

Spin-polarized inelastic tunneling through insulating barriers.

Résumé

Spin-conserving hopping transport through chains of localized states has been evidenced by taking benefit of the high degree of spin-polarization of CoFeB-MgO-CoFeB magnetic tunnel junctions. In particular, our data show that relatively thick MgO barriers doped with boron favor the activation of spin-conserving inelastic channels through a chain of three localized states and leading to reduced magnetoresistance effects. We propose an extension of the Glazman-Matveev theory to the case of ferromagnetic reservoirs to account for spin-polarized inelastic tunneling through nonmagnetic localized states embedded in an insulating barrier.
Fichier non déposé

Dates et versions

hal-00663791 , version 1 (27-01-2012)

Identifiants

Citer

Y. Lu, Michaël Tran, Henri Jaffrès, Pierre Seneor, Cyrile Deranlot, et al.. Spin-polarized inelastic tunneling through insulating barriers.. Physical Review Letters, 2009, 102 (17), pp.176801. ⟨10.1103/PhysRevLett.102.176801⟩. ⟨hal-00663791⟩
74 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More