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Article Dans Une Revue Journal of Applied Physics Année : 2009

Thermal grafting of fluorinated molecular monolayers on doped amorphous silicon surfaces

Résumé

Thermally induced (160-300 °C) gas phase grafting of linear alkene molecules (perfluorodecene) was performed on hydrogenated amorphous silicon (a-Si:H) films, either nominally undoped or doped with different boron and phosphorus concentrations. Dense and smooth a-Si:H films were grown using plasma decomposition of silane. Quantitative analysis of in situ x-ray photoelectron spectroscopy indicates the grafting of a single layer of organic molecules. The hydrophobic properties of perfluorodecene-modified surfaces were studied as a function of surface coverage. Annealing experiments in ultrahigh vacuum show the covalent binding and the thermal stability of these immobilized layers up to 370 °C this temperature corresponds to the Si-C bond cleavage temperature. In contrast with hydrogenated crystalline Si(111):H, no heavy wet chemistry surface preparation is required for thermal grafting of alkene molecules on a-Si:H films. A threshold grafting temperature is observed, with a strong dependence on the doping level which produces a large contrast in the molecular coverage for grafting performed at 230 °C.
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Dates et versions

hal-00663782 , version 1 (27-01-2012)

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Hussein Sabbah, Joao Pedro Conde, Virginia Chu, Abdelkader Zebda, Soraya Ababou-Girard, et al.. Thermal grafting of fluorinated molecular monolayers on doped amorphous silicon surfaces. Journal of Applied Physics, 2009, 105 (6), pp.4914. ⟨10.1063/1.3095474⟩. ⟨hal-00663782⟩
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