Demonstration of 1.51μm InAs/InP(311)B quantum dot single-mode laser operating under continuous wave - Université de Rennes Accéder directement au contenu
Article Dans Une Revue IET Optoelectron. Année : 2007

Demonstration of 1.51μm InAs/InP(311)B quantum dot single-mode laser operating under continuous wave

Résumé

The achievement of a 1.51 µm InAs/InP(311)B quantum dot (QD) single-mode Fabry–Perot laser operating under continuous wave at room temperature is reported. A threshold current of 80 mA associated with a 0.12 W/A external efficiency is reported for as-cleaved device at room temperature. The maximum output power, the gain peak wavelength at threshold and the full width at half maximum of the spectral gain are 5 mW, 1512 nm and 60 nm, respectively. Although these performances must be improved in the future, these results constitute to our knowledge the state-of-the-art on InP(3 1 1)B substrate. These results are of great interest since QD-based lasers are expected to play a major role in the next generation telecommunication networks as low-cost devices.
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hal-00494346 , version 1 (22-06-2010)

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Gautier Moreau, Kamel Merghem, Anthony Martinez, Sophie Bouchoule, A. Ramdane, et al.. Demonstration of 1.51μm InAs/InP(311)B quantum dot single-mode laser operating under continuous wave. IET Optoelectron., 2007, pp.255-258. ⟨10.1049/iet-opt:20070037⟩. ⟨hal-00494346⟩
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